IXYS GP70N33 330V 70A Medium Frequency IGBT rectification applications. Planar cell structure for wide

Planar cell structure for wide SOA (SAFE OPERATING AREA)

Low reverse current

Dynamic dv/dt Rating

resulting in a high power factor and reduced THD (Total Harmonic Distortion)

Linearizing Diodes

IXYS GP70N33 330V 70A Medium Frequency IGBT rectification applications. Planar cell structure for wideIXGP70N33 is a medium frequency insulated gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high frequency Applications. The diode is used extensively in AC motor speed control, DC choppers, uninterrupted power supplies (UPS), and so on. It is suitable for surface mountings. This diode comes in a 3 pin layout namely ground (G), emitter (E), and